Physical identification of an excess base current component in silicided half-micrometer polysilicon-emitter bipolar transistors

Physical identification of an excess base current component in silicided half-micrometer polysilicon-emitter bipolar transistors

The narrow emitter effect associated with the self-aligned silicidation of the emitter and base regions of an advanced single-polysilicon bipolar transistor structure is analysed. This effect is shown to arise from an increased electron recombination at the periphery of the emitter, due to the proxi...

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Bibliographische Detailangaben
Hauptverfasser: Chantre, A., Kirtsch, J., Degors, N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Bipolar transistors
CMOS technology
Electron emission
Fabrication
Metallization
Silicidation
Spontaneous emission
Telecommunications
Titanium
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Zusammenfassung:The narrow emitter effect associated with the self-aligned silicidation of the emitter and base regions of an advanced single-polysilicon bipolar transistor structure is analysed. This effect is shown to arise from an increased electron recombination at the periphery of the emitter, due to the proximity of the silicided base contact to the emitter edge. The impact of this phenomenon on the scaling of the device to subhalf-micrometer dimensions is discussed.