High Concentration Boron Diffusion Study Using A Complete Point Defect And Dynamic Nucleation Model

The diffusion and activation of boron at high concentrations are key problems in designing ultra-shallow P + junctions. In this paper, the behavior of boron diffusion after high dose ion implantation is analysed using the theory of nucleation. For the first time, a dynamic nucleation formulation is...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Vandenbossche, E., Baccus, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Atomic measurements Boron Frequency Implants Ion implantation Poisson equations Semiconductor process modeling Shape Transient analysis
Online-Zugang:	Volltext bestellen
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