High Concentration Boron Diffusion Study Using A Complete Point Defect And Dynamic Nucleation Model

High Concentration Boron Diffusion Study Using A Complete Point Defect And Dynamic Nucleation Model

The diffusion and activation of boron at high concentrations are key problems in designing ultra-shallow P + junctions. In this paper, the behavior of boron diffusion after high dose ion implantation is analysed using the theory of nucleation. For the first time, a dynamic nucleation formulation is...

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Bibliographische Detailangaben
Hauptverfasser: Vandenbossche, E., Baccus, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Atomic measurements
Boron
Frequency
Implants
Ion implantation
Poisson equations
Semiconductor process modeling
Shape
Transient analysis
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Beschreibung
Zusammenfassung:The diffusion and activation of boron at high concentrations are key problems in designing ultra-shallow P + junctions. In this paper, the behavior of boron diffusion after high dose ion implantation is analysed using the theory of nucleation. For the first time, a dynamic nucleation formulation is included in a complete point defect diffusion model together with ion implantation damage. This allows to analyse the transient behavior of the precipitated phase and the electrical activation above solubility limit.