A Silicon technology for active high frequency circuits

A Silicon technology for active high frequency circuits

Monolithic integrated IMPATT diodes are manufactured as millimeter wave power generators in slot line resonator-antennas. Silicon molecular beam epitaxy (Si-MBE) is used for the growth of the active layers. A fabrication process with a self stopping etchant, self aligned contacts, silicon nitride pa...

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Veröffentlicht in:ESSDERC '92: 22nd European Solid State Device Research conference 1992, Vol.19 (1), p.717-720
Hauptverfasser: Strohm, K.M., Buechler, J., Luy, J.-F., Schäffler, F.
Format: Artikel
Sprache:eng
Schlagworte:
Diodes
Fabrication
Frequency
Integrated circuit technology
Manufacturing
Millimeter wave technology
MIMICs
Molecular beam epitaxial growth
Power generation
Silicon
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Zusammenfassung:Monolithic integrated IMPATT diodes are manufactured as millimeter wave power generators in slot line resonator-antennas. Silicon molecular beam epitaxy (Si-MBE) is used for the growth of the active layers. A fabrication process with a self stopping etchant, self aligned contacts, silicon nitride passivation and air-bridge technology is used. The emitted radiation of the millimeter wave transmitter chip is 2.6 mW at 90.6 GHz in cw-operation and 50 mW at 92 GHz in pulsed operation.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90529-Z