Rapid thermal annealing of metastable and stable Si/Si1-xGex heterojunction bipolar transistors

The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collec...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Shafi, Z.A., Martin, A.S.R., Whitehurst, J., Ashburn, P., Godfrey, D.J., Gibbings, C.J, Post, I.R.C., Tuppen, C.G., Booker, G.R., Jones, M.E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boron Doping Heterojunction bipolar transistors Metastasis Molecular beam epitaxial growth Rapid thermal annealing Rapid thermal processing Simulated annealing Temperature distribution Thermal resistance
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collector current is degraded by the out-diffusion of boron from the base, creating parasitic barriers to injection. For some devices, the E/B depletion region recombination is reduced to such an extent that the base current is dominated by neutral base recombination.