Planar 100 GHz silicon detector circuits
On high resistive silicon substrates Schottky barrier diodes have been monolithically integrated with planar antenna structures. The Schottky barrier diodes were fabricated on n + diffusion regions with thin epitaxial layers grown by molecular beam epitaxy. Low series resistance ( < 6 Ω), idealit...
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Veröffentlicht in: | ESSDERC '91: 21st European Solid State Device Research Conference 1991, Vol.15 (1), p.285-288 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | On high resistive silicon substrates Schottky barrier diodes have been monolithically integrated with planar antenna structures. The Schottky barrier diodes were fabricated on n
+ diffusion regions with thin epitaxial layers grown by molecular beam epitaxy. Low series resistance (
< 6 Ω), ideality factor of less than 1.1 and cut-off frequencies up to 1 THz have been achieved. The maximum sensitivity of the detector was 90 mV/(mW cm
-2) at 94 GHz. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/0167-9317(91)90230-B |