A 30fJ/conversion-step 8b 0-to-10MS/s asynchronous SAR ADC in 90nm CMOS
An 8 b SAR ADC is presented. The 90 nm CMOS prototype achieves an ENOB of 7.8 b at a sampling frequency of 10.24 MS/S. The use of asynchronous dynamic CMOS logic, custom-designed capacitors, an internal common-mode shift and low-leakage design techniques results in a power consumption of 69 ¿W from...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | An 8 b SAR ADC is presented. The 90 nm CMOS prototype achieves an ENOB of 7.8 b at a sampling frequency of 10.24 MS/S. The use of asynchronous dynamic CMOS logic, custom-designed capacitors, an internal common-mode shift and low-leakage design techniques results in a power consumption of 69 ¿W from a 1 V supply. The corresponding FoM equals 30 fJ/Conversion-step and is maintained down to 10 kS/s. |
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ISSN: | 0193-6530 2376-8606 |
DOI: | 10.1109/ISSCC.2010.5433967 |