A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio

A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA...

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Bibliographische Detailangaben

Hauptverfasser:	Sandstrom, D., Varonen, M., Karkkainen, M., Halonen, K.A.I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth Circuits CMOS technology Coplanar waveguides Impedance matching MIM capacitors Power generation Radio frequency Semiconductor device modeling Transmitters
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