A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio

A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio

A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA...

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Bibliographische Detailangaben
Hauptverfasser: Sandstrom, D., Varonen, M., Karkkainen, M., Halonen, K.A.I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Circuits
CMOS technology
Coplanar waveguides
Impedance matching
MIM capacitors
Power generation
Radio frequency
Semiconductor device modeling
Transmitters
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Beschreibung
Zusammenfassung:A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA from a 1.2 V supply.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2010.5433851