Effects of Zn doping on the In15Sb85 phase change recording thin films

Effects of Zn doping on the In15Sb85 phase change recording thin films

The (In 15 Sb 85 ) 100-x Zn x films (x = 0~17.4) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InZn composite target. The optical and thermal properties of the films were examined by a homemade reflectivity thermal anal...

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Bibliographische Detailangaben
Hauptverfasser: Sin-Liang Ou, Po-Cheng Kuo, Shu-Chi Sheu, Ger-Pin Lin, Tsung-Lin Tsai, Wei-Tai Tang, Don-Yau Chiang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Electron optics
Glass
Magnetic analysis
Microstructure
Optical films
Reflectivity
Semiconductor films
Temperature
Zinc
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Zusammenfassung:The (In 15 Sb 85 ) 100-x Zn x films (x = 0~17.4) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InZn composite target. The optical and thermal properties of the films were examined by a homemade reflectivity thermal analyzer. Microstructures of the films were analyzed by transmission electron microscope (TEM). As x = 0~17.4, thermal analysis shows that the (In 15 Sb 85 ) 100-x Zn x films have two phase transition temperature ranges, 189°C ~ 215°C and 300°C ~ 350°C.
ISSN:2159-3523
DOI:10.1109/INEC.2010.5424614