Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram
In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 . Results revealed that our Ga 3 Te 2 Sb 12 device possesses an outstanding performance of a lower reset current. Beside,...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 699 |
|---|---|
| container_issue | |
| container_start_page | 698 |
| container_title | |
| container_volume | |
| creator | Kin-Fu Kao Yung-Ching Chu Ming-Jinn Tsai Tsung-Shune Chin |
| description | In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 . Results revealed that our Ga 3 Te 2 Sb 12 device possesses an outstanding performance of a lower reset current. Beside, the archival retention for ten years can be safely stored at 180°C. |
| doi_str_mv | 10.1109/INEC.2010.5424608 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5424608</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5424608</ieee_id><sourcerecordid>5424608</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-a58e1a16c9b3b8fefbb997ee8966728928dc242dff35a0891bc0c29addf552a63</originalsourceid><addsrcrecordid>eNo1UMFKAzEUjGjBtvYDxEt-YGvykuwmR1lqLVQ9WM_lJZu4kV1asgHp37vSOpeZgWEYhpB7zpacM_O4eVvVS2CjVRJkyfQVmfFRSaGkrK7JwlT63wu4IVPgyhRCgZiQGTCmDR_BbsliGL4ZY4JrbbScktdV511O0WFHXYsJXfYpDjm6gR4CXaPYefiwHOhPzC1t41dLc-tTP-aHjDZ2MZ9oOCR6TNjfkUnAbvCLC8_J5_NqV78U2_f1pn7aFpFXKheotOfIS2essDr4YK0xlffalGUF2oBuHEhoQhAK_7ZbxxwYbJqgFGAp5uTh3Bu99_tjij2m0_5yjfgFnPRS7Q</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kin-Fu Kao ; Yung-Ching Chu ; Ming-Jinn Tsai ; Tsung-Shune Chin</creator><creatorcontrib>Kin-Fu Kao ; Yung-Ching Chu ; Ming-Jinn Tsai ; Tsung-Shune Chin</creatorcontrib><description>In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 . Results revealed that our Ga 3 Te 2 Sb 12 device possesses an outstanding performance of a lower reset current. Beside, the archival retention for ten years can be safely stored at 180°C.</description><identifier>ISSN: 2159-3523</identifier><identifier>ISBN: 9781424435432</identifier><identifier>ISBN: 1424435439</identifier><identifier>EISBN: 1424435447</identifier><identifier>EISBN: 9781424435449</identifier><identifier>DOI: 10.1109/INEC.2010.5424608</identifier><identifier>LCCN: 2008911110</identifier><language>eng</language><publisher>IEEE</publisher><subject>Data engineering ; Electric resistance ; Electric variables ; Materials science and technology ; Phase change memory ; Phase change random access memory ; Sputtering ; Temperature dependence ; Thermal stability ; Transistors</subject><ispartof>2010 3rd International Nanoelectronics Conference (INEC), 2010, p.698-699</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5424608$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5424608$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kin-Fu Kao</creatorcontrib><creatorcontrib>Yung-Ching Chu</creatorcontrib><creatorcontrib>Ming-Jinn Tsai</creatorcontrib><creatorcontrib>Tsung-Shune Chin</creatorcontrib><title>Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram</title><title>2010 3rd International Nanoelectronics Conference (INEC)</title><addtitle>INEC</addtitle><description>In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 . Results revealed that our Ga 3 Te 2 Sb 12 device possesses an outstanding performance of a lower reset current. Beside, the archival retention for ten years can be safely stored at 180°C.</description><subject>Data engineering</subject><subject>Electric resistance</subject><subject>Electric variables</subject><subject>Materials science and technology</subject><subject>Phase change memory</subject><subject>Phase change random access memory</subject><subject>Sputtering</subject><subject>Temperature dependence</subject><subject>Thermal stability</subject><subject>Transistors</subject><issn>2159-3523</issn><isbn>9781424435432</isbn><isbn>1424435439</isbn><isbn>1424435447</isbn><isbn>9781424435449</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UMFKAzEUjGjBtvYDxEt-YGvykuwmR1lqLVQ9WM_lJZu4kV1asgHp37vSOpeZgWEYhpB7zpacM_O4eVvVS2CjVRJkyfQVmfFRSaGkrK7JwlT63wu4IVPgyhRCgZiQGTCmDR_BbsliGL4ZY4JrbbScktdV511O0WFHXYsJXfYpDjm6gR4CXaPYefiwHOhPzC1t41dLc-tTP-aHjDZ2MZ9oOCR6TNjfkUnAbvCLC8_J5_NqV78U2_f1pn7aFpFXKheotOfIS2essDr4YK0xlffalGUF2oBuHEhoQhAK_7ZbxxwYbJqgFGAp5uTh3Bu99_tjij2m0_5yjfgFnPRS7Q</recordid><startdate>201001</startdate><enddate>201001</enddate><creator>Kin-Fu Kao</creator><creator>Yung-Ching Chu</creator><creator>Ming-Jinn Tsai</creator><creator>Tsung-Shune Chin</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201001</creationdate><title>Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram</title><author>Kin-Fu Kao ; Yung-Ching Chu ; Ming-Jinn Tsai ; Tsung-Shune Chin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-a58e1a16c9b3b8fefbb997ee8966728928dc242dff35a0891bc0c29addf552a63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Data engineering</topic><topic>Electric resistance</topic><topic>Electric variables</topic><topic>Materials science and technology</topic><topic>Phase change memory</topic><topic>Phase change random access memory</topic><topic>Sputtering</topic><topic>Temperature dependence</topic><topic>Thermal stability</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Kin-Fu Kao</creatorcontrib><creatorcontrib>Yung-Ching Chu</creatorcontrib><creatorcontrib>Ming-Jinn Tsai</creatorcontrib><creatorcontrib>Tsung-Shune Chin</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kin-Fu Kao</au><au>Yung-Ching Chu</au><au>Ming-Jinn Tsai</au><au>Tsung-Shune Chin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram</atitle><btitle>2010 3rd International Nanoelectronics Conference (INEC)</btitle><stitle>INEC</stitle><date>2010-01</date><risdate>2010</risdate><spage>698</spage><epage>699</epage><pages>698-699</pages><issn>2159-3523</issn><isbn>9781424435432</isbn><isbn>1424435439</isbn><eisbn>1424435447</eisbn><eisbn>9781424435449</eisbn><abstract>In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 . Results revealed that our Ga 3 Te 2 Sb 12 device possesses an outstanding performance of a lower reset current. Beside, the archival retention for ten years can be safely stored at 180°C.</abstract><pub>IEEE</pub><doi>10.1109/INEC.2010.5424608</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2159-3523 |
| ispartof | 2010 3rd International Nanoelectronics Conference (INEC), 2010, p.698-699 |
| issn | 2159-3523 |
| language | eng |
| recordid | cdi_ieee_primary_5424608 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Data engineering Electric resistance Electric variables Materials science and technology Phase change memory Phase change random access memory Sputtering Temperature dependence Thermal stability Transistors |
| title | Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T10%3A28%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electrical%20characteristics%20of%20Ga3Te2Sb12%20with%20high%20thermal%20stability%20for%20pram&rft.btitle=2010%203rd%20International%20Nanoelectronics%20Conference%20(INEC)&rft.au=Kin-Fu%20Kao&rft.date=2010-01&rft.spage=698&rft.epage=699&rft.pages=698-699&rft.issn=2159-3523&rft.isbn=9781424435432&rft.isbn_list=1424435439&rft_id=info:doi/10.1109/INEC.2010.5424608&rft_dat=%3Cieee_6IE%3E5424608%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424435447&rft.eisbn_list=9781424435449&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5424608&rfr_iscdi=true |