Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram

In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 . Results revealed that our Ga 3 Te 2 Sb 12 device possesses an outstanding performance of a lower reset current. Beside,...

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Hauptverfasser:	Kin-Fu Kao, Yung-Ching Chu, Ming-Jinn Tsai, Tsung-Shune Chin
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Data engineering Electric resistance Electric variables Materials science and technology Phase change memory Phase change random access memory Sputtering Temperature dependence Thermal stability Transistors
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Beschreibung
Zusammenfassung:	In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 . Results revealed that our Ga 3 Te 2 Sb 12 device possesses an outstanding performance of a lower reset current. Beside, the archival retention for ten years can be safely stored at 180°C.
ISSN:	2159-3523
DOI:	10.1109/INEC.2010.5424608