In-situ synchrotron X-ray diffraction measurement of epitaxial FeRh thin films
The magnetic properties and structure of FeRh thin film epitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380 K. Both M-T curve and d-...
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creator | Sung-Uk Jang Seungmin Hyun Hwan Soo Lee Soon-Ju Kwon Ji-Hong Kim Ki-Hoon Park Hak-Joo Lee |
description | The magnetic properties and structure of FeRh thin film epitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380 K. Both M-T curve and d-spacing changes correspond to each other very closely. Abrupt changes in the lattice constants can be observed from the in-situ analysis. Also, there is the likelihood of existence of a new phase. |
doi_str_mv | 10.1109/INEC.2010.5424542 |
format | Conference Proceeding |
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The transition temperature of FeRh thin films was around 380 K. Both M-T curve and d-spacing changes correspond to each other very closely. Abrupt changes in the lattice constants can be observed from the in-situ analysis. Also, there is the likelihood of existence of a new phase.</description><identifier>ISSN: 2159-3523</identifier><identifier>ISBN: 9781424435432</identifier><identifier>ISBN: 1424435439</identifier><identifier>EISBN: 1424435447</identifier><identifier>EISBN: 9781424435449</identifier><identifier>DOI: 10.1109/INEC.2010.5424542</identifier><identifier>LCCN: 2008911110</identifier><language>eng</language><publisher>IEEE</publisher><subject>Heating ; Lattices ; Magnetic films ; Magnetic properties ; Materials science and technology ; Substrates ; Synchrotrons ; Temperature ; Transistors ; X-ray diffraction</subject><ispartof>2010 3rd International Nanoelectronics Conference (INEC), 2010, p.742-743</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5424542$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5424542$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sung-Uk Jang</creatorcontrib><creatorcontrib>Seungmin Hyun</creatorcontrib><creatorcontrib>Hwan Soo Lee</creatorcontrib><creatorcontrib>Soon-Ju Kwon</creatorcontrib><creatorcontrib>Ji-Hong Kim</creatorcontrib><creatorcontrib>Ki-Hoon Park</creatorcontrib><creatorcontrib>Hak-Joo Lee</creatorcontrib><title>In-situ synchrotron X-ray diffraction measurement of epitaxial FeRh thin films</title><title>2010 3rd International Nanoelectronics Conference (INEC)</title><addtitle>INEC</addtitle><description>The magnetic properties and structure of FeRh thin film epitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380 K. Both M-T curve and d-spacing changes correspond to each other very closely. Abrupt changes in the lattice constants can be observed from the in-situ analysis. Also, there is the likelihood of existence of a new phase.</description><subject>Heating</subject><subject>Lattices</subject><subject>Magnetic films</subject><subject>Magnetic properties</subject><subject>Materials science and technology</subject><subject>Substrates</subject><subject>Synchrotrons</subject><subject>Temperature</subject><subject>Transistors</subject><subject>X-ray diffraction</subject><issn>2159-3523</issn><isbn>9781424435432</isbn><isbn>1424435439</isbn><isbn>1424435447</isbn><isbn>9781424435449</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kNFKAzEQRSNasK37AeJLfmDrZJLsJo9S2looFUTBt5LdJmykuy1JCvbvDVgHhnvPPFy4Q8gjgxljoJ_X28V8hpBRChR5b8iEZSe4FKK-JYWu1T9zvCNjZFKXXCIfkQkCKM3ywD0pYvwGAM6U0kqMyXY9lNGnM42Xoe3CMYXjQL_KYC50750Lpk0-X3pr4jnY3g6JHh21J5_MjzcHurTvHU2dH6jzhz4-kJEzh2iLq07J53LxMX8tN2-r9fxlU3pWy1S2fC9ZroMKtXaCQ9PiXlgQUFXIsZLaOlY1HLF1UitUdWPANUZCq7jKLafk6S_XW2t3p-B7Ey6762_4LxcGUk8</recordid><startdate>201001</startdate><enddate>201001</enddate><creator>Sung-Uk Jang</creator><creator>Seungmin Hyun</creator><creator>Hwan Soo Lee</creator><creator>Soon-Ju Kwon</creator><creator>Ji-Hong Kim</creator><creator>Ki-Hoon Park</creator><creator>Hak-Joo Lee</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201001</creationdate><title>In-situ synchrotron X-ray diffraction measurement of epitaxial FeRh thin films</title><author>Sung-Uk Jang ; Seungmin Hyun ; Hwan Soo Lee ; Soon-Ju Kwon ; Ji-Hong Kim ; Ki-Hoon Park ; Hak-Joo Lee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-c3d5120128299f430bc2d4e04066232659ef16b322cf598287ba0fba50c838443</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Heating</topic><topic>Lattices</topic><topic>Magnetic films</topic><topic>Magnetic properties</topic><topic>Materials science and technology</topic><topic>Substrates</topic><topic>Synchrotrons</topic><topic>Temperature</topic><topic>Transistors</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Sung-Uk Jang</creatorcontrib><creatorcontrib>Seungmin Hyun</creatorcontrib><creatorcontrib>Hwan Soo Lee</creatorcontrib><creatorcontrib>Soon-Ju Kwon</creatorcontrib><creatorcontrib>Ji-Hong Kim</creatorcontrib><creatorcontrib>Ki-Hoon Park</creatorcontrib><creatorcontrib>Hak-Joo Lee</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sung-Uk Jang</au><au>Seungmin Hyun</au><au>Hwan Soo Lee</au><au>Soon-Ju Kwon</au><au>Ji-Hong Kim</au><au>Ki-Hoon Park</au><au>Hak-Joo Lee</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>In-situ synchrotron X-ray diffraction measurement of epitaxial FeRh thin films</atitle><btitle>2010 3rd International Nanoelectronics Conference (INEC)</btitle><stitle>INEC</stitle><date>2010-01</date><risdate>2010</risdate><spage>742</spage><epage>743</epage><pages>742-743</pages><issn>2159-3523</issn><isbn>9781424435432</isbn><isbn>1424435439</isbn><eisbn>1424435447</eisbn><eisbn>9781424435449</eisbn><abstract>The magnetic properties and structure of FeRh thin film epitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380 K. Both M-T curve and d-spacing changes correspond to each other very closely. Abrupt changes in the lattice constants can be observed from the in-situ analysis. Also, there is the likelihood of existence of a new phase.</abstract><pub>IEEE</pub><doi>10.1109/INEC.2010.5424542</doi><tpages>2</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Heating Lattices Magnetic films Magnetic properties Materials science and technology Substrates Synchrotrons Temperature Transistors X-ray diffraction |
title | In-situ synchrotron X-ray diffraction measurement of epitaxial FeRh thin films |
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