16nm functional 0.039µm2 6T-SRAM cell with nano injection lithography, nanowire channel, and full TiN gate

Record area size of 0.039 μm 2 for a functional 6T-SRAM cell has been successfully achieved with a novel Nano Injection Lithography (NIL) technique and dynamic V dd regulator (DVR). The NIL technique is not only maskless for minimizing entry cost but also photoresist free to greatly enhance pattern...

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Bibliographische Detailangaben

Hauptverfasser:	Hou-Yu Chen, Chun-Chi Chen, Fu-Kuo Hsueh, Jan-Tsai Liu, Chih-Yen Shen, Chiung-Chih Hsu, Shyi-Long Shy, Bih-Tiao Lin, Hsi-Ta Chuang, Cheng-San Wu, Chenming Hu, Chien-Chao Huang, Fu-Liang Yang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuits Lithography Nanoscale devices Platinum Proximity effect Random access memory Regulators Resists Tin Ultraviolet sources
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