High gain, high linearity, L-band SiGe low noise amplifier with fully-integrated matching network

This paper presents an L-band silicon-germanium (SiGe) low-noise amplifier (LNA) for use in Global Positioning System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 × 1 mm 2 (including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2....

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Bibliographische Detailangaben
Hauptverfasser:	Poh, J.C.H., Peng Cheng, Thrivikraman, T.K., Cressler, J.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Cutoff frequency Germanium silicon alloys Global Positioning System Global Positioning System (GPS) heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors L-band Linearity low noise amplifier (LNA) Low-noise amplifiers Noise figure Radio frequency Silicon germanium silicon-germanium (SiGe)
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Beschreibung
Zusammenfassung:	This paper presents an L-band silicon-germanium (SiGe) low-noise amplifier (LNA) for use in Global Positioning System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 × 1 mm 2 (including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P 1dB ) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm.
DOI:	10.1109/SMIC.2010.5422953