InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths

An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300 W, the slope efficiency 3.5%, and the threshold pump power density 700 kW/cm 2 . Critical parameters in the design of the laser will be discussed and ways to i...

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Veröffentlicht in:IEEE photonics technology letters 2010-05, Vol.22 (9), p.652-654
Hauptverfasser: Debusmann, R, Dhidah, N, Hoffmann, V, Weixelbaum, L, Brauch, U, Graf, T, Weyers, M, Kneissl, M
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container_issue 9
container_start_page 652
container_title IEEE photonics technology letters
container_volume 22
creator Debusmann, R
Dhidah, N
Hoffmann, V
Weixelbaum, L
Brauch, U
Graf, T
Weyers, M
Kneissl, M
description An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300 W, the slope efficiency 3.5%, and the threshold pump power density 700 kW/cm 2 . Critical parameters in the design of the laser will be discussed and ways to improve the performance will be suggested.
doi_str_mv 10.1109/LPT.2010.2043668
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subjects Conferences
Density
Fiber optics
Frequency conversion
Gallium compounds
Holes
indium compounds
Laser excitation
Lasers
nitrogen compounds
Optical buffering
Optical fibers
Optical materials
Optical pumping
Pump lasers
Pumps
quantum-well (QW) lasers
Semiconductor lasers
Stimulated emission
Surface emitting lasers
Vertical cavity surface emitting lasers
title InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths
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