InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths

An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300 W, the slope efficiency 3.5%, and the threshold pump power density 700 kW/cm 2 . Critical parameters in the design of the laser will be discussed and ways to i...

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Veröffentlicht in:	IEEE photonics technology letters 2010-05, Vol.22 (9), p.652-654
Hauptverfasser:	Debusmann, R, Dhidah, N, Hoffmann, V, Weixelbaum, L, Brauch, U, Graf, T, Weyers, M, Kneissl, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Conferences Density Fiber optics Frequency conversion Gallium compounds Holes indium compounds Laser excitation Lasers nitrogen compounds Optical buffering Optical fibers Optical materials Optical pumping Pump lasers Pumps quantum-well (QW) lasers Semiconductor lasers Stimulated emission Surface emitting lasers Vertical cavity surface emitting lasers
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Beschreibung
Zusammenfassung:	An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300 W, the slope efficiency 3.5%, and the threshold pump power density 700 kW/cm 2 . Critical parameters in the design of the laser will be discussed and ways to improve the performance will be suggested.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2010.2043668