Didactic simulation of a metal oxide semiconductor structure

In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript/Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practica...

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Bibliographische Detailangaben
Hauptverfasser: Magrez, H., Kassmi, K., Ziyyat, A.
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript/Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practical concepts on the same graphical interface: it shows the impact of physical and electrical parameters on the behavior of a MOS structure or a transistor TMOS. Moreover, it provides the physical reasons of the parameters influence that can serve to evaluate the relevance of approximations commonly used. This simulation is applied in engineering education.
ISSN:2159-1660
DOI:10.1109/ICM.2009.5418626