Flicker noise in N-type and P-type silicon nanowire transistors

Flicker noise in N-type and P-type silicon nanowire transistors

For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.

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Bibliographische Detailangaben
Hauptverfasser: Seungwon Yang, Younghwan Son, Sung Dae Suk, Dong-Won Kim, Donggun Park, Kyungseok Oh, Hyungcheol Shin
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
1f noise
Current measurement
Electrons
Germanium silicon alloys
Heart
Isotopes
Modems
Physics
Quantum dots
Silicon germanium
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Beschreibung
Zusammenfassung:For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2008.5418460