Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor

Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor

We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the na...

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Hauptverfasser: DukSoo Kim, YoungChai Jung, MiYoung Park, ByungSung Kim, SuHeon Hong, MinSu Choi, MyungGil Kang, YunSeop Yu, DongMok Whang, SungWoo Hwang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Electric variables
FETs
Gold
Intrusion detection
Nanoscale devices
Silicon
Time domain analysis
Transconductance
Voltage
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Beschreibung
Zusammenfassung:We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2008.5418412