Extraction of location and energies of traps in nanoscale flash memory using RTN

Recently, several reports have been published on RTS noise which brings about large Vu, fluctuation in floating gate flash memory. However, they have primarily looked at the RTS distribution of the main array without providing a detailed description of the physical mechanism and have not discussed the location and energy of traps. In this paper, we accurately extracted the location (vertical and lateral position) of traps and trap energy from RTS noise. Also, we extracted the trap locations and trap energies with simultaneous extraction method in the device having two traps which shows complex RTS noise.