Comparative study of low-temperature PECVD Of amorphous silicon using mono-, di-, trisilane and cyclohexasilane

Comparative study of low-temperature PECVD Of amorphous silicon using mono-, di-, trisilane and cyclohexasilane

The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si 6 H 12 (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 °C

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Bibliographische Detailangaben
Hauptverfasser: Pokhodnya, K., Sandstrom, J., Olson, C., Xuliang Dai, Boudjouk, P.R., Schulz, D.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous silicon
Argon
Chemical vapor deposition
Hydrogen
Plasma chemistry
Plasma temperature
Raman scattering
Semiconductor films
Substrates
Temperature distribution
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Beschreibung
Zusammenfassung:The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si 6 H 12 (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 °C
ISSN:0160-8371
DOI:10.1109/PVSC.2009.5411459