18.9% efficient silicon solar cell with laser doped emitter

18.9% efficient silicon solar cell with laser doped emitter

A new record in laser doped solar cells with an efficiency ¿ = 18.9% is here reported. The ipe laser doping process allows for the fabrication of emitters of silicon solar cells via liquid state diffusion of predeposited dopant layers. Laser doping of sputtered phosphorus precursors results in an op...

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Bibliographische Detailangaben
Hauptverfasser: Eisele, S., Roder, T., Ametowobla, M., Bilger, G., Kohler, J.R., Werner, J.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Optical device fabrication
Passivation
Photovoltaic cells
Pulsed laser deposition
Semiconductor device doping
Semiconductor lasers
Silicon
Surface emitting lasers
Voltage
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Zusammenfassung:A new record in laser doped solar cells with an efficiency ¿ = 18.9% is here reported. The ipe laser doping process allows for the fabrication of emitters of silicon solar cells via liquid state diffusion of predeposited dopant layers. Laser doping of sputtered phosphorus precursors results in an open circuit voltage V oc = 677 mV, thus, ipe laser doping is comparable to furnace diffusion.
ISSN:0160-8371
DOI:10.1109/PVSC.2009.5411148