High frequency drain current noise modeling in MOSFETs under sub-threshold condition

A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measu...

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Bibliographische Detailangaben
Hauptverfasser:	Chan, L.H.K., Yeo, K.S., Chew, K.W.J., Ong, S.N., Loo, X.S., Boon, C.C., Do, M.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing De-embedding Frequency Gallium arsenide High frequency noise III-V semiconductor materials Materials science and technology MOSFET MOSFETs Noise modeling Optical pulses Pulsed laser deposition RF MOS transistor noise RFCMOS noise Semiconductor diodes Semiconductor lasers Sub-threshold noise Weak inversion noise
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Beschreibung
Zusammenfassung:	A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz.
ISSN:	2325-0631