Improving Operational transconductance Amplifier (OTA) gain-bandwidth tradeoff using gate-underlap MOSFETs

Improving Operational transconductance Amplifier (OTA) gain-bandwidth tradeoff using gate-underlap MOSFETs

The present work highlights the usefulness of underlap channel design in improving gain-bandwidth trade-off in analog circuit design. It is demonstrated that high values of intrinsic voltage gain (A VO_OTA ) > 55 dB and unity gain frequency (f T_OTA ) ~ 57 GHz of a folded cascode Operational tran...

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Bibliographische Detailangaben
Hauptverfasser: Kranti, A., Armstrong, G.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analog circuits
Circuit simulation
CMOS technology
Doping profiles
MOSFETs
Operational amplifiers
Semiconductor process modeling
Temperature
Transconductance
Voltage
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Beschreibung
Zusammenfassung:The present work highlights the usefulness of underlap channel design in improving gain-bandwidth trade-off in analog circuit design. It is demonstrated that high values of intrinsic voltage gain (A VO_OTA ) > 55 dB and unity gain frequency (f T_OTA ) ~ 57 GHz of a folded cascode Operational transconductance Amplifier (OTA) can be achieved with gate-underlap channel design in 60 nm MOSFETs. These values correspond to a 15 dB improvement in A VO_OTA and a 3 fold enhancement in f T_OTA over a conventional non-underlap design. Gate-underlap OTA preserves functionality at high temperatures (550 K) by exhibiting high values of A VO_OTA (42 dB) and f T_OTA (24 GHz). Results present new opportunities for low voltage analog circuit design with future technologies.
ISSN:2164-1676
2164-1706
DOI:10.1109/SOCCON.2009.5398084