Experimental analysis of substrate isolation techniques for RF-SOC integration

Experimental analysis of substrate isolation techniques for RF-SOC integration

Experimental measurements of the isolation provided by N and P-type rings, and triple-well structures implemented in 0.35 ¿m and 0.18 ¿m technologies are presented. The results obtained are compared to previous experimental works on isolation, and the conditions that affect the efficacy of the isola...

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Bibliographische Detailangaben
Hauptverfasser: Molina, M., Aragones, X., Gonzalez, J.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit noise
CMOS technology
Conductivity
Coupling circuits
Dielectric substrates
Isolation technology
Probes
Radio frequency
Testing
Wireless communication
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Beschreibung
Zusammenfassung:Experimental measurements of the isolation provided by N and P-type rings, and triple-well structures implemented in 0.35 ¿m and 0.18 ¿m technologies are presented. The results obtained are compared to previous experimental works on isolation, and the conditions that affect the efficacy of the isolation techniques are discussed, as well as their dependence with frequency.
ISSN:2164-1676
2164-1706
DOI:10.1109/SOCCON.2009.5398059