CMOS RF Power Amplifier for UHF Stationary RFID Reader

A CMOS power amplifier (PA) for a UHF (860-960 MHz) stationary RFID reader is presented. To design a high power and power efficient CMOS PA, quasi four pair structure and integrated passive device (IPD) transformers are used. An amplitude modulation is performed through the cascode gate with a pulse...

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Veröffentlicht in:IEEE microwave and wireless components letters 2010-02, Vol.20 (2), p.106-108
Hauptverfasser: JOO, Taehwan, LEE, Hongtak, SHIM, Sunbo, HONG, Songcheol
Format: Artikel
Sprache:eng
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Zusammenfassung:A CMOS power amplifier (PA) for a UHF (860-960 MHz) stationary RFID reader is presented. To design a high power and power efficient CMOS PA, quasi four pair structure and integrated passive device (IPD) transformers are used. An amplitude modulation is performed through the cascode gate with a pulse shaping filter. The chips are fabricated in a 0.18 ¿m CMOS process and IPD. Measurements show output power of 32.8-33.37 dBm and the power added efficiency (PAE) of 51.8-56.1% with the supply voltage 3.0 V.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2009.2038552