Inter-symbol interference (ISI) in on-die transmission lines

The waveforms of a signal transmitted through single-ended on-die transmission lines, implemented by standard metal layers of a CMOS 45 nm technology node, have been experimentally studied. The influence of the active loss level of the lines, as well as of the impedance mismatch between the transmis...

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Bibliographische Detailangaben
Hauptverfasser:	Rysin, A., Livshits, P., Sofer, S., Mantel, O., Shapira, Y., Fefer, Y.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Dielectric losses Distortion global wiring Impedance inter-symbol interference Intersymbol interference on-chip interconnections on-chip transmission line Power transmission lines Propagation losses Repeaters transmission line Transmission lines Very large scale integration VLSI
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Beschreibung
Zusammenfassung:	The waveforms of a signal transmitted through single-ended on-die transmission lines, implemented by standard metal layers of a CMOS 45 nm technology node, have been experimentally studied. The influence of the active loss level of the lines, as well as of the impedance mismatch between the transmission line and its driver upon the signal distortion, and particularly upon the inter-symbol interference, is discussed.
DOI:	10.1109/COMCAS.2009.5385987