A radically different model for NBTI in nitrided oxide MOSFETs

A radically different model for NBTI in nitrided oxide MOSFETs

This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent...

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1. Verfasser: Lenahan, P.M.
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Sprache:eng
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Current measurement
Diffusion bonding
Hydrogen
Magnetic resonance
MOS devices
MOSFETs
Niobium compounds
Nitrogen
Predictive models
Titanium compounds
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description This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.
doi_str_mv 10.1109/IRWS.2009.5383026
format Conference Proceeding
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subjects Current measurement
Diffusion bonding
Hydrogen
Magnetic resonance
MOS devices
MOSFETs
Niobium compounds
Nitrogen
Predictive models
Titanium compounds
title A radically different model for NBTI in nitrided oxide MOSFETs
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