A radically different model for NBTI in nitrided oxide MOSFETs

This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.