Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing

Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing

A collection of slides from the author's conference presentation shows dopant activation by pulsed laser thermal annealing. It also discusses single pulse deep melt activation, layer electrical properties and specific multiple layer junctions properties.

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Bibliographische Detailangaben
Hauptverfasser: Huet, K., Boniface, C., Fisicaro, G., Desse, F., Variam, N., Erokhin, Y., La Magna, A., Privitera, V., Schuhmacher, M., Besaucele, H., Venturing, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Implants
Laser theory
Laser transitions
Optical pulses
Permission
Power lasers
Semiconductor lasers
Silicon
Simulated annealing
Solid lasers
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Beschreibung
Zusammenfassung:A collection of slides from the author's conference presentation shows dopant activation by pulsed laser thermal annealing. It also discusses single pulse deep melt activation, layer electrical properties and specific multiple layer junctions properties.
ISSN:1944-0251
1944-026X
DOI:10.1109/RTP.2009.5373482