22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI

B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj

Bibliographische Detailangaben

Hauptverfasser:	Borland, John, Tanjyo, Masayasu, Hamamoto, Nariaki, Nagayama, Tsutomu, Muthukrishnan, Shankar, Zelenko, Jeremy, Mirshad, Iad, Johnson, Walt, Buyuklimanli, Temel
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous materials Annealing Degradation Electrical resistance measurement Implants Laser theory Optical materials Silicon Surface emitting lasers Surface resistance
Online-Zugang:	Volltext bestellen
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