22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI

22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI

B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj

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Bibliographische Detailangaben
Hauptverfasser: Borland, John, Tanjyo, Masayasu, Hamamoto, Nariaki, Nagayama, Tsutomu, Muthukrishnan, Shankar, Zelenko, Jeremy, Mirshad, Iad, Johnson, Walt, Buyuklimanli, Temel
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous materials
Annealing
Degradation
Electrical resistance measurement
Implants
Laser theory
Optical materials
Silicon
Surface emitting lasers
Surface resistance
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Beschreibung
Zusammenfassung:B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj
ISSN:1944-0251
1944-026X
DOI:10.1109/RTP.2009.5373435