22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI
B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj
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| creator | Borland, John Tanjyo, Masayasu Hamamoto, Nariaki Nagayama, Tsutomu Muthukrishnan, Shankar Zelenko, Jeremy Mirshad, Iad Johnson, Walt Buyuklimanli, Temel |
| description | B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj |
| doi_str_mv | 10.1109/RTP.2009.5373435 |
| format | Conference Proceeding |
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All the wafers were MSA (msec annealed) by DSA laser at 1175°C, 1225°C, 1275°C and 1325°C and the results show that the Rs and Bss values for B 36 H 44 without PAI was always better than those reported using monomer B and BF 2 with MSA even though the retained dose was only 67% compared to 100% for monomer B and 55% for BF 2 and we noted that the surface oxide directly affects the retained dose. Adding Ge or In PAI had no effect on dopant activation due to the self-amorphization effects of B 36 H 44 however, Xe-PAI improved activation by 20% but degraded junction leakage. In-PAI also had the highest lifetime. However, we noted that Xe-PAI behaves differently compared to Ge-PAI and In-PAI, TW values were always much higher and independent of the anneal technique (MSA, spike/RTA or furnace anneal) even though no defects could be detected by X-TEM suggesting uniform distribution of vacancy cluster defects throughout the amorphous region.</description><identifier>ISSN: 1944-0251</identifier><identifier>ISBN: 9781424438143</identifier><identifier>ISBN: 1424438144</identifier><identifier>EISSN: 1944-026X</identifier><identifier>EISBN: 9781424438150</identifier><identifier>EISBN: 1424438152</identifier><identifier>DOI: 10.1109/RTP.2009.5373435</identifier><identifier>LCCN: 2009900286</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amorphous materials ; Annealing ; Degradation ; Electrical resistance measurement ; Implants ; Laser theory ; Optical materials ; Silicon ; Surface emitting lasers ; Surface resistance</subject><ispartof>2009 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009, p.1-5</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5373435$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5373435$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Borland, John</creatorcontrib><creatorcontrib>Tanjyo, Masayasu</creatorcontrib><creatorcontrib>Hamamoto, Nariaki</creatorcontrib><creatorcontrib>Nagayama, Tsutomu</creatorcontrib><creatorcontrib>Muthukrishnan, Shankar</creatorcontrib><creatorcontrib>Zelenko, Jeremy</creatorcontrib><creatorcontrib>Mirshad, Iad</creatorcontrib><creatorcontrib>Johnson, Walt</creatorcontrib><creatorcontrib>Buyuklimanli, Temel</creatorcontrib><title>22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI</title><title>2009 17th International Conference on Advanced Thermal Processing of Semiconductors</title><addtitle>RTP</addtitle><description>B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj<7nm and selected wafers also had various PAI (pre-amorphizing implantation) using Ge 10keV, Xe 14keV and In 14keV to create an amorphous layer 16-17nm deep. All the wafers were MSA (msec annealed) by DSA laser at 1175°C, 1225°C, 1275°C and 1325°C and the results show that the Rs and Bss values for B 36 H 44 without PAI was always better than those reported using monomer B and BF 2 with MSA even though the retained dose was only 67% compared to 100% for monomer B and 55% for BF 2 and we noted that the surface oxide directly affects the retained dose. Adding Ge or In PAI had no effect on dopant activation due to the self-amorphization effects of B 36 H 44 however, Xe-PAI improved activation by 20% but degraded junction leakage. In-PAI also had the highest lifetime. However, we noted that Xe-PAI behaves differently compared to Ge-PAI and In-PAI, TW values were always much higher and independent of the anneal technique (MSA, spike/RTA or furnace anneal) even though no defects could be detected by X-TEM suggesting uniform distribution of vacancy cluster defects throughout the amorphous region.</description><subject>Amorphous materials</subject><subject>Annealing</subject><subject>Degradation</subject><subject>Electrical resistance measurement</subject><subject>Implants</subject><subject>Laser theory</subject><subject>Optical materials</subject><subject>Silicon</subject><subject>Surface emitting lasers</subject><subject>Surface resistance</subject><issn>1944-0251</issn><issn>1944-026X</issn><isbn>9781424438143</isbn><isbn>1424438144</isbn><isbn>9781424438150</isbn><isbn>1424438152</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUE1Lw0AQXT8K1pq74GXvknR2Z7PJHmuptlBskYDeyiTZaEq6KUmK-O9NaRGcw8yDN-_xeIzdCwiEADN-S9aBBDBBiBEqDC-YZ6JYKKkUxiKESzYURikfpP64-scpvP7jQjFgt0cbAyBjfcO8tt1CPypEgGjIXqV0O-7q3PL9I98eXNaVteNtRlXpPvmhPe4n1HOlOLmcV9TapkfOnh6-y-6L1w1_H6_4erK4Y4OCqtZ65ztiyfMsmc795eplMZ0s_dJA5-e5RlNEQDoVtkCkUBNFCpBIpkoSZkWqKevjF5HVBWqMrbEy7TU5WCNxxB5OtqW1drNvyh01P5tzU_gLSMpTTg</recordid><startdate>200909</startdate><enddate>200909</enddate><creator>Borland, John</creator><creator>Tanjyo, Masayasu</creator><creator>Hamamoto, Nariaki</creator><creator>Nagayama, Tsutomu</creator><creator>Muthukrishnan, Shankar</creator><creator>Zelenko, Jeremy</creator><creator>Mirshad, Iad</creator><creator>Johnson, Walt</creator><creator>Buyuklimanli, Temel</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200909</creationdate><title>22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI</title><author>Borland, John ; Tanjyo, Masayasu ; Hamamoto, Nariaki ; Nagayama, Tsutomu ; Muthukrishnan, Shankar ; Zelenko, Jeremy ; Mirshad, Iad ; Johnson, Walt ; Buyuklimanli, Temel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-dd639f70a6b1ef33a56aa7403aa2b42a3cfb6ac025f7e6f3638e9e2b9f7d0e923</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Amorphous materials</topic><topic>Annealing</topic><topic>Degradation</topic><topic>Electrical resistance measurement</topic><topic>Implants</topic><topic>Laser theory</topic><topic>Optical materials</topic><topic>Silicon</topic><topic>Surface emitting lasers</topic><topic>Surface resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Borland, John</creatorcontrib><creatorcontrib>Tanjyo, Masayasu</creatorcontrib><creatorcontrib>Hamamoto, Nariaki</creatorcontrib><creatorcontrib>Nagayama, Tsutomu</creatorcontrib><creatorcontrib>Muthukrishnan, Shankar</creatorcontrib><creatorcontrib>Zelenko, Jeremy</creatorcontrib><creatorcontrib>Mirshad, Iad</creatorcontrib><creatorcontrib>Johnson, Walt</creatorcontrib><creatorcontrib>Buyuklimanli, Temel</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Borland, John</au><au>Tanjyo, Masayasu</au><au>Hamamoto, Nariaki</au><au>Nagayama, Tsutomu</au><au>Muthukrishnan, Shankar</au><au>Zelenko, Jeremy</au><au>Mirshad, Iad</au><au>Johnson, Walt</au><au>Buyuklimanli, Temel</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI</atitle><btitle>2009 17th International Conference on Advanced Thermal Processing of Semiconductors</btitle><stitle>RTP</stitle><date>2009-09</date><risdate>2009</risdate><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>1944-0251</issn><eissn>1944-026X</eissn><isbn>9781424438143</isbn><isbn>1424438144</isbn><eisbn>9781424438150</eisbn><eisbn>1424438152</eisbn><abstract>B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj<7nm and selected wafers also had various PAI (pre-amorphizing implantation) using Ge 10keV, Xe 14keV and In 14keV to create an amorphous layer 16-17nm deep. All the wafers were MSA (msec annealed) by DSA laser at 1175°C, 1225°C, 1275°C and 1325°C and the results show that the Rs and Bss values for B 36 H 44 without PAI was always better than those reported using monomer B and BF 2 with MSA even though the retained dose was only 67% compared to 100% for monomer B and 55% for BF 2 and we noted that the surface oxide directly affects the retained dose. Adding Ge or In PAI had no effect on dopant activation due to the self-amorphization effects of B 36 H 44 however, Xe-PAI improved activation by 20% but degraded junction leakage. In-PAI also had the highest lifetime. However, we noted that Xe-PAI behaves differently compared to Ge-PAI and In-PAI, TW values were always much higher and independent of the anneal technique (MSA, spike/RTA or furnace anneal) even though no defects could be detected by X-TEM suggesting uniform distribution of vacancy cluster defects throughout the amorphous region.</abstract><pub>IEEE</pub><doi>10.1109/RTP.2009.5373435</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 1944-0251 |
| ispartof | 2009 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009, p.1-5 |
| issn | 1944-0251 1944-026X |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Amorphous materials Annealing Degradation Electrical resistance measurement Implants Laser theory Optical materials Silicon Surface emitting lasers Surface resistance |
| title | 22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI |
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