22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing
We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C 7 H 7 ) with P 4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge,...
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| creator | Borland, John Tanjyo, Masayasu Hamamoto, Nariaki Nagayama, Tsutomu Muthukrishnan, Shankar Zelenko, Jeremy Mirshad, Iad Johnson, Walt Buyuklimanli, Temel Itokawa, Hiroshi Mizushima, Ichiro Suguro, Kyoichi |
| description | We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C 7 H 7 ) with P 4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. A P dopant activation level of 4E20/cm 3 and a Csub level of 1.52% for Sb-PAI+C 7 +P 4 was realized with s strain layer depth of 50nm using a 1325°C peak laser anneal temperature. |
| doi_str_mv | 10.1109/RTP.2009.5373426 |
| format | Conference Proceeding |
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Both monomer C and molecular C (C 7 H 7 ) with P 4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. 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Both monomer C and molecular C (C 7 H 7 ) with P 4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. A P dopant activation level of 4E20/cm 3 and a Csub level of 1.52% for Sb-PAI+C 7 +P 4 was realized with s strain layer depth of 50nm using a 1325°C peak laser anneal temperature.</description><subject>Amorphous materials</subject><subject>Annealing</subject><subject>Capacitive sensors</subject><subject>Doping</subject><subject>Implants</subject><subject>Lattices</subject><subject>Optical materials</subject><subject>Silicon carbide</subject><subject>Strain control</subject><subject>Temperature</subject><issn>1944-0251</issn><issn>1944-026X</issn><isbn>9781424438143</isbn><isbn>1424438144</isbn><isbn>1424438152</isbn><isbn>9781424438150</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9z71LA0EQBfDRGDCn6QWb6Y9cZnfnPrYMRyR2h0mRLixk1JXLJuxGxP_eCIml1St-jwcP4EFRoRTZ6cuqKzSRLUpTG9bVFWSKNbNpVKmvYaQs84R0tR7A2NbNxdjc_FmphpD9blgi3VS3kKX0QVRaqngEc63DDsN-KxhyXPoW0zFKSvuIn8mHN9yKHLCbPedtvajzjvHLH9-xd0kiuhDE9afWPQxfXZ9kfM47eHyar9rFxIvI5hD9zsXvzfmD-V9_AOPOP8k</recordid><startdate>200909</startdate><enddate>200909</enddate><creator>Borland, John</creator><creator>Tanjyo, Masayasu</creator><creator>Hamamoto, Nariaki</creator><creator>Nagayama, Tsutomu</creator><creator>Muthukrishnan, Shankar</creator><creator>Zelenko, Jeremy</creator><creator>Mirshad, Iad</creator><creator>Johnson, Walt</creator><creator>Buyuklimanli, Temel</creator><creator>Itokawa, Hiroshi</creator><creator>Mizushima, Ichiro</creator><creator>Suguro, Kyoichi</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200909</creationdate><title>22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing</title><author>Borland, John ; Tanjyo, Masayasu ; Hamamoto, Nariaki ; Nagayama, Tsutomu ; Muthukrishnan, Shankar ; Zelenko, Jeremy ; Mirshad, Iad ; Johnson, Walt ; Buyuklimanli, Temel ; Itokawa, Hiroshi ; Mizushima, Ichiro ; Suguro, Kyoichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_53734263</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Amorphous materials</topic><topic>Annealing</topic><topic>Capacitive sensors</topic><topic>Doping</topic><topic>Implants</topic><topic>Lattices</topic><topic>Optical materials</topic><topic>Silicon carbide</topic><topic>Strain control</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Borland, John</creatorcontrib><creatorcontrib>Tanjyo, Masayasu</creatorcontrib><creatorcontrib>Hamamoto, Nariaki</creatorcontrib><creatorcontrib>Nagayama, Tsutomu</creatorcontrib><creatorcontrib>Muthukrishnan, Shankar</creatorcontrib><creatorcontrib>Zelenko, Jeremy</creatorcontrib><creatorcontrib>Mirshad, Iad</creatorcontrib><creatorcontrib>Johnson, Walt</creatorcontrib><creatorcontrib>Buyuklimanli, Temel</creatorcontrib><creatorcontrib>Itokawa, Hiroshi</creatorcontrib><creatorcontrib>Mizushima, Ichiro</creatorcontrib><creatorcontrib>Suguro, Kyoichi</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Borland, John</au><au>Tanjyo, Masayasu</au><au>Hamamoto, Nariaki</au><au>Nagayama, Tsutomu</au><au>Muthukrishnan, Shankar</au><au>Zelenko, Jeremy</au><au>Mirshad, Iad</au><au>Johnson, Walt</au><au>Buyuklimanli, Temel</au><au>Itokawa, Hiroshi</au><au>Mizushima, Ichiro</au><au>Suguro, Kyoichi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing</atitle><btitle>2009 17th International Conference on Advanced Thermal Processing of Semiconductors</btitle><stitle>RTP</stitle><date>2009-09</date><risdate>2009</risdate><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>1944-0251</issn><eissn>1944-026X</eissn><isbn>9781424438143</isbn><isbn>1424438144</isbn><eisbn>1424438152</eisbn><eisbn>9781424438150</eisbn><abstract>We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C 7 H 7 ) with P 4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. A P dopant activation level of 4E20/cm 3 and a Csub level of 1.52% for Sb-PAI+C 7 +P 4 was realized with s strain layer depth of 50nm using a 1325°C peak laser anneal temperature.</abstract><pub>IEEE</pub><doi>10.1109/RTP.2009.5373426</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1944-0251 |
| ispartof | 2009 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009, p.1-8 |
| issn | 1944-0251 1944-026X |
| language | eng |
| recordid | cdi_ieee_primary_5373426 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Amorphous materials Annealing Capacitive sensors Doping Implants Lattices Optical materials Silicon carbide Strain control Temperature |
| title | 22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing |
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