22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing

22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing

We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C 7 H 7 ) with P 4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge,...

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Hauptverfasser: Borland, John, Tanjyo, Masayasu, Hamamoto, Nariaki, Nagayama, Tsutomu, Muthukrishnan, Shankar, Zelenko, Jeremy, Mirshad, Iad, Johnson, Walt, Buyuklimanli, Temel, Itokawa, Hiroshi, Mizushima, Ichiro, Suguro, Kyoichi
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous materials
Annealing
Capacitive sensors
Doping
Implants
Lattices
Optical materials
Silicon carbide
Strain control
Temperature
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Zusammenfassung:We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C 7 H 7 ) with P 4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. A P dopant activation level of 4E20/cm 3 and a Csub level of 1.52% for Sb-PAI+C 7 +P 4 was realized with s strain layer depth of 50nm using a 1325°C peak laser anneal temperature.
ISSN:1944-0251
1944-026X
DOI:10.1109/RTP.2009.5373426