Asymmetric condition computed from the four tone input GaN HEMT
Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (¿ 0 ). In addition to that, the critical operating frequency interval is established.
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| creator | Yildirim, R. Celebi, F.V. Guclu Yavuzcan, H. Gokrem, L. |
| description | Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (¿ 0 ). In addition to that, the critical operating frequency interval is established. |
| doi_str_mv | 10.1109/ICAICT.2009.5372485 |
| format | Conference Proceeding |
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In addition to that, the critical operating frequency interval is established.</description><subject>Asymmetry</subject><subject>Capacitance</subject><subject>Computer industry</subject><subject>Feedback</subject><subject>Frequency</subject><subject>Gallium nitride</subject><subject>HEMT</subject><subject>HEMTs</subject><subject>Inte rmodulation</subject><subject>MODFETs</subject><subject>Transconductance</subject><subject>Voltage</subject><subject>Volterra Series</subject><isbn>1424447399</isbn><isbn>9781424447398</isbn><isbn>1424447402</isbn><isbn>9781424447404</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jr0OgjAAhGsMiX88AUtfQGxLEToZQlAYdGInBEqssZS0ZeDtxYQ4esvd5bvhAPAw8jFG7FSkSZGWPkGI-WEQERqHK7DDlFBKI4rI-lcCxhyw-w4ZCnHMNsA15oVm0ZAwet6CS2ImKbnVooGN6lthhernJIfR8hZ2Wklonxx2atTQqp5D0c8I3uoHzLN7eQBOV78NdxffA--alWl-FJzzatBC1nqqlpfBf_oBYOg8qQ</recordid><startdate>200910</startdate><enddate>200910</enddate><creator>Yildirim, R.</creator><creator>Celebi, F.V.</creator><creator>Guclu Yavuzcan, H.</creator><creator>Gokrem, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200910</creationdate><title>Asymmetric condition computed from the four tone input GaN HEMT</title><author>Yildirim, R. ; Celebi, F.V. ; Guclu Yavuzcan, H. ; Gokrem, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_53724853</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Asymmetry</topic><topic>Capacitance</topic><topic>Computer industry</topic><topic>Feedback</topic><topic>Frequency</topic><topic>Gallium nitride</topic><topic>HEMT</topic><topic>HEMTs</topic><topic>Inte rmodulation</topic><topic>MODFETs</topic><topic>Transconductance</topic><topic>Voltage</topic><topic>Volterra Series</topic><toplevel>online_resources</toplevel><creatorcontrib>Yildirim, R.</creatorcontrib><creatorcontrib>Celebi, F.V.</creatorcontrib><creatorcontrib>Guclu Yavuzcan, H.</creatorcontrib><creatorcontrib>Gokrem, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yildirim, R.</au><au>Celebi, F.V.</au><au>Guclu Yavuzcan, H.</au><au>Gokrem, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Asymmetric condition computed from the four tone input GaN HEMT</atitle><btitle>2009 International Conference on Application of Information and Communication Technologies</btitle><stitle>ICAICT</stitle><date>2009-10</date><risdate>2009</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><isbn>1424447399</isbn><isbn>9781424447398</isbn><eisbn>1424447402</eisbn><eisbn>9781424447404</eisbn><abstract>Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (¿ 0 ). In addition to that, the critical operating frequency interval is established.</abstract><pub>IEEE</pub><doi>10.1109/ICAICT.2009.5372485</doi></addata></record> |
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| ispartof | 2009 International Conference on Application of Information and Communication Technologies, 2009, p.1-4 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Asymmetry Capacitance Computer industry Feedback Frequency Gallium nitride HEMT HEMTs Inte rmodulation MODFETs Transconductance Voltage Volterra Series |
| title | Asymmetric condition computed from the four tone input GaN HEMT |
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