Asymmetric condition computed from the four tone input GaN HEMT

Asymmetric condition computed from the four tone input GaN HEMT

Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (¿ 0 ). In addition to that, the critical operating frequency interval is established.

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Bibliographische Detailangaben
Hauptverfasser: Yildirim, R., Celebi, F.V., Guclu Yavuzcan, H., Gokrem, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Asymmetry
Capacitance
Computer industry
Feedback
Frequency
Gallium nitride
HEMT
HEMTs
Inte rmodulation
MODFETs
Transconductance
Voltage
Volterra Series
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Beschreibung
Zusammenfassung:Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (¿ 0 ). In addition to that, the critical operating frequency interval is established.
DOI:10.1109/ICAICT.2009.5372485