Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simula...

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Veröffentlicht in:	IEEE electron device letters 2010-02, Vol.31 (2), p.150-152
Hauptverfasser:	Tettamanzi, G.C., Paul, A., Lansbergen, G.P., Verduijn, J., Sunhee Lee, Collaert, N., Biesemans, S., Klimeck, G., Rogge, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Applied sciences Cross sections Current distribution Devices Electronics Evolution Exact sciences and technology FETs FinFET FinFETs Geometry Mathematical analysis MOSFETs Quantum computing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Thermionic emission tight binding (TB) Transistors Transport Voltage
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