Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simula...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2010-02, Vol.31 (2), p.150-152
Hauptverfasser: Tettamanzi, G.C., Paul, A., Lansbergen, G.P., Verduijn, J., Sunhee Lee, Collaert, N., Biesemans, S., Klimeck, G., Rogge, S.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Applied sciences
Cross sections
Current distribution
Devices
Electronics
Evolution
Exact sciences and technology
FETs
FinFET
FinFETs
Geometry
Mathematical analysis
MOSFETs
Quantum computing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Thermionic emission
tight binding (TB)
Transistors
Transport
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2036134