Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs
Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simula...
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| Veröffentlicht in: | IEEE electron device letters 2010-02, Vol.31 (2), p.150-152 |
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| container_end_page | 152 |
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| container_issue | 2 |
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| container_title | IEEE electron device letters |
| container_volume | 31 |
| creator | Tettamanzi, G.C. Paul, A. Lansbergen, G.P. Verduijn, J. Sunhee Lee Collaert, N. Biesemans, S. Klimeck, G. Rogge, S. |
| description | Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics. |
| doi_str_mv | 10.1109/LED.2009.2036134 |
| format | Article |
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The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2036134</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analytical models ; Applied sciences ; Cross sections ; Current distribution ; Devices ; Electronics ; Evolution ; Exact sciences and technology ; FETs ; FinFET ; FinFETs ; Geometry ; Mathematical analysis ; MOSFETs ; Quantum computing ; Semiconductor electronics. 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The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics.</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Cross sections</subject><subject>Current distribution</subject><subject>Devices</subject><subject>Electronics</subject><subject>Evolution</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>FinFET</subject><subject>FinFETs</subject><subject>Geometry</subject><subject>Mathematical analysis</subject><subject>MOSFETs</subject><subject>Quantum computing</subject><subject>Semiconductor electronics. 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Solid state devices</subject><subject>Temperature</subject><subject>Thermionic emission</subject><subject>tight binding (TB)</subject><subject>Transistors</subject><subject>Transport</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kE1rGzEQhkVoIK6Te6AXUSjtZRONvnUsid0EDD3UOQtZH2TNeuVK64P_fRRscuihF43QPPMyehC6BXIHQMz9avF4Rwkx7WASGL9AMxBCd0RI9gnNiOLQMSDyCn2udUsIcK74DD2uX2PZ9XnsPV7s-lrbFbuKHV7nPOAp4z_TIRzxurix7nOZcD_ilzHkfQx4XPbjcrGu1-gyuaHGm3Odo5f2_PDUrX7_en74ueo802LqkjFapBCUBp-04y5wmYwiCZjZBJm4NFFJxVV02m80ZxsKPCRHhdSgg2dz9P2Uuy_57yHWybaNfRwGN8Z8qFYJpqhkxDTyx39JkAooI1Tyhn79B93mQxnbP6wBMJoKThpETpAvudYSk92XfufK0QKx7_5t82_f_duz_zby7ZzrqndDagJ9Xz_mKOWGCkob9-XE9THGj7ZgQlJQ7A0ee4uF</recordid><startdate>20100201</startdate><enddate>20100201</enddate><creator>Tettamanzi, G.C.</creator><creator>Paul, A.</creator><creator>Lansbergen, G.P.</creator><creator>Verduijn, J.</creator><creator>Sunhee Lee</creator><creator>Collaert, N.</creator><creator>Biesemans, S.</creator><creator>Klimeck, G.</creator><creator>Rogge, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Temperature</topic><topic>Thermionic emission</topic><topic>tight binding (TB)</topic><topic>Transistors</topic><topic>Transport</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tettamanzi, G.C.</creatorcontrib><creatorcontrib>Paul, A.</creatorcontrib><creatorcontrib>Lansbergen, G.P.</creatorcontrib><creatorcontrib>Verduijn, J.</creatorcontrib><creatorcontrib>Sunhee Lee</creatorcontrib><creatorcontrib>Collaert, N.</creatorcontrib><creatorcontrib>Biesemans, S.</creatorcontrib><creatorcontrib>Klimeck, G.</creatorcontrib><creatorcontrib>Rogge, S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tettamanzi, G.C.</au><au>Paul, A.</au><au>Lansbergen, G.P.</au><au>Verduijn, J.</au><au>Sunhee Lee</au><au>Collaert, N.</au><au>Biesemans, S.</au><au>Klimeck, G.</au><au>Rogge, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-02-01</date><risdate>2010</risdate><volume>31</volume><issue>2</issue><spage>150</spage><epage>152</epage><pages>150-152</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2009.2036134</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Applied sciences Cross sections Current distribution Devices Electronics Evolution Exact sciences and technology FETs FinFET FinFETs Geometry Mathematical analysis MOSFETs Quantum computing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Thermionic emission tight binding (TB) Transistors Transport Voltage |
| title | Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs |
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