Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

Bibliographische Detailangaben

Hauptverfasser:	Porte, H., Jepsen, P.U., Daghestani, N., Rafailov, E., Turchinovich, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium arsenide Indium gallium arsenide Optical attenuators Optical pulses Optical pumping Optical sensors Probes Quantum dots Spectroscopy Ultrafast optics
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