Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

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Bibliographische Detailangaben
Hauptverfasser: Porte, H., Jepsen, P.U., Daghestani, N., Rafailov, E., Turchinovich, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
Indium gallium arsenide
Optical attenuators
Optical pulses
Optical pumping
Optical sensors
Probes
Quantum dots
Spectroscopy
Ultrafast optics
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Beschreibung
Zusammenfassung:Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2009.5343415