The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs
Al 0.27 Ga 0.73 N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3223-3228 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3228 |
|---|---|
| container_issue | 6 |
| container_start_page | 3223 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 56 |
| creator | Moran, J.T. McClory, J.W. Petrosky, J.C. Farlow, G.C. |
| description | Al 0.27 Ga 0.73 N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature. |
| doi_str_mv | 10.1109/TNS.2009.2033694 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_5341411</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5341411</ieee_id><sourcerecordid>869859133</sourcerecordid><originalsourceid>FETCH-LOGICAL-c369t-64069d0d67d86ddf8bdf2bcb939a43e1a03a0ea591ab0334fe02abccfc0d20c33</originalsourceid><addsrcrecordid>eNpdkD1PwzAQhi0EEqWwI7FELExpz7GTxmNVlRapKgjCbDn2WaRKk2InA_8ep60YkHz-uvc53b2E3FOYUApiWmw_JgmACBtjmeAXZETTNI9pOssvyQiA5rHgQlyTG-934clTSEdEFV8YLa1F3fmotVGB-wM61fUOI9WYaFmHjGub6F2ZSnVVuIXVDdAxU2lVR2-uDVBX4bHEvF6p7TREtH5eFv6WXFlVe7w7n2PyGb4X63jzunpZzDexDu12ccYhEwZMNjN5ZozNS2OTUpeCCcUZUgVMAapUUFWGCblFSFSptdVgEtCMjcnTqe7Btd89-k7uK6-xrlWDbe9lnok80GxQPv5T7treNaE5KWgCdAZ0EMFJpF3rvUMrD67aK_cjKcjBcRkcl4Pj8ux4QB5OSIWIf_KUccopZb8sGnvg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912017013</pqid></control><display><type>article</type><title>The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs</title><source>IEEE Electronic Library (IEL)</source><creator>Moran, J.T. ; McClory, J.W. ; Petrosky, J.C. ; Farlow, G.C.</creator><creatorcontrib>Moran, J.T. ; McClory, J.W. ; Petrosky, J.C. ; Farlow, G.C.</creatorcontrib><description>Al 0.27 Ga 0.73 N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2009.2033694</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum gallium nitrides ; Charging ; Current measurement ; Electrical properties ; Electron irradiation ; Electron radiation ; Electrons ; Gallium ; Gallium nitride ; Gallium nitrides ; Gate leakage ; Gates ; HEMTs ; heterojunction field effect transistors ; Leakage ; Leakage current ; MODFETs ; Temperature ; Tunneling</subject><ispartof>IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3223-3228</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-64069d0d67d86ddf8bdf2bcb939a43e1a03a0ea591ab0334fe02abccfc0d20c33</citedby><cites>FETCH-LOGICAL-c369t-64069d0d67d86ddf8bdf2bcb939a43e1a03a0ea591ab0334fe02abccfc0d20c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5341411$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5341411$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Moran, J.T.</creatorcontrib><creatorcontrib>McClory, J.W.</creatorcontrib><creatorcontrib>Petrosky, J.C.</creatorcontrib><creatorcontrib>Farlow, G.C.</creatorcontrib><title>The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Al 0.27 Ga 0.73 N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature.</description><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Charging</subject><subject>Current measurement</subject><subject>Electrical properties</subject><subject>Electron irradiation</subject><subject>Electron radiation</subject><subject>Electrons</subject><subject>Gallium</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Gate leakage</subject><subject>Gates</subject><subject>HEMTs</subject><subject>heterojunction field effect transistors</subject><subject>Leakage</subject><subject>Leakage current</subject><subject>MODFETs</subject><subject>Temperature</subject><subject>Tunneling</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkD1PwzAQhi0EEqWwI7FELExpz7GTxmNVlRapKgjCbDn2WaRKk2InA_8ep60YkHz-uvc53b2E3FOYUApiWmw_JgmACBtjmeAXZETTNI9pOssvyQiA5rHgQlyTG-934clTSEdEFV8YLa1F3fmotVGB-wM61fUOI9WYaFmHjGub6F2ZSnVVuIXVDdAxU2lVR2-uDVBX4bHEvF6p7TREtH5eFv6WXFlVe7w7n2PyGb4X63jzunpZzDexDu12ccYhEwZMNjN5ZozNS2OTUpeCCcUZUgVMAapUUFWGCblFSFSptdVgEtCMjcnTqe7Btd89-k7uK6-xrlWDbe9lnok80GxQPv5T7treNaE5KWgCdAZ0EMFJpF3rvUMrD67aK_cjKcjBcRkcl4Pj8ux4QB5OSIWIf_KUccopZb8sGnvg</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Moran, J.T.</creator><creator>McClory, J.W.</creator><creator>Petrosky, J.C.</creator><creator>Farlow, G.C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20091201</creationdate><title>The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs</title><author>Moran, J.T. ; McClory, J.W. ; Petrosky, J.C. ; Farlow, G.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-64069d0d67d86ddf8bdf2bcb939a43e1a03a0ea591ab0334fe02abccfc0d20c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Charging</topic><topic>Current measurement</topic><topic>Electrical properties</topic><topic>Electron irradiation</topic><topic>Electron radiation</topic><topic>Electrons</topic><topic>Gallium</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>Gate leakage</topic><topic>Gates</topic><topic>HEMTs</topic><topic>heterojunction field effect transistors</topic><topic>Leakage</topic><topic>Leakage current</topic><topic>MODFETs</topic><topic>Temperature</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moran, J.T.</creatorcontrib><creatorcontrib>McClory, J.W.</creatorcontrib><creatorcontrib>Petrosky, J.C.</creatorcontrib><creatorcontrib>Farlow, G.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Moran, J.T.</au><au>McClory, J.W.</au><au>Petrosky, J.C.</au><au>Farlow, G.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2009-12-01</date><risdate>2009</risdate><volume>56</volume><issue>6</issue><spage>3223</spage><epage>3228</epage><pages>3223-3228</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Al 0.27 Ga 0.73 N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2009.2033694</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3223-3228 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_5341411 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium nitride Aluminum gallium nitrides Charging Current measurement Electrical properties Electron irradiation Electron radiation Electrons Gallium Gallium nitride Gallium nitrides Gate leakage Gates HEMTs heterojunction field effect transistors Leakage Leakage current MODFETs Temperature Tunneling |
| title | The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T06%3A06%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Effects%20of%20Temperature%20and%20Electron%20Radiation%20on%20the%20Electrical%20Properties%20of%20AlGaN/GaN%20HFETs&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Moran,%20J.T.&rft.date=2009-12-01&rft.volume=56&rft.issue=6&rft.spage=3223&rft.epage=3228&rft.pages=3223-3228&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2009.2033694&rft_dat=%3Cproquest_RIE%3E869859133%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912017013&rft_id=info:pmid/&rft_ieee_id=5341411&rfr_iscdi=true |