The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs

Al 0.27 Ga 0.73 N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively...

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Veröffentlicht in:	IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3223-3228
Hauptverfasser:	Moran, J.T., McClory, J.W., Petrosky, J.C., Farlow, G.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Charging Current measurement Electrical properties Electron irradiation Electron radiation Electrons Gallium Gallium nitride Gallium nitrides Gate leakage Gates HEMTs heterojunction field effect transistors Leakage Leakage current MODFETs Temperature Tunneling
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Zusammenfassung:	Al 0.27 Ga 0.73 N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2009.2033694