Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate

Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate

Ga(NAsP) multi quantum well heterostructures were grown pseudomorphically on exactly oriented (001) silicon substrates without the formation of misfit dislocations. Optical pumped lasing operation was observed at temperatures up to 125 K.

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Bibliographische Detailangaben
Hauptverfasser: Kunert, B., Liebich, S., Zimprich, M., Zinnkann, S., Fritz, R., Volz, K., Stolz, W., Lange, C., Koster, N.S., Chatterjee, S., Ruhle, W.W., Gerhardt, N.C., Koukourakis, N., Hofmann, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diode lasers
Lattices
Optical materials
Photonic band gap
Photonic integrated circuits
Physics
Semiconductor materials
Silicon
Substrates
Temperature dependence
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Beschreibung
Zusammenfassung:Ga(NAsP) multi quantum well heterostructures were grown pseudomorphically on exactly oriented (001) silicon substrates without the formation of misfit dislocations. Optical pumped lasing operation was observed at temperatures up to 125 K.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2009.5338394