Monolithic Ge/Si avalanche photodiodes
We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 27 |
|---|---|
| container_issue | |
| container_start_page | 25 |
| container_title | |
| container_volume | |
| creator | Yimin Kang Morse, M. Paniccia, M.J. Zadka, M. Saad, Y. Sarid, G. Pauchard, A. Zaoui, W.S. Hui-Wen Chen Daoxin Dai Bowers, J.E. Han-Din Liu Mcintosh, D.C. Xiaoguang Zheng Campbell, J.C. |
| description | We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively. |
| doi_str_mv | 10.1109/GROUP4.2009.5338300 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5338300</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5338300</ieee_id><sourcerecordid>5338300</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-66b369c96e8213bdf512cc8cc74936fc87d774b3d1176d0e261aca6650d45a723</originalsourceid><addsrcrecordid>eNo9j09LwzAYh-M_cM5-gl168tbufZM0yXuUoVWYTHSCt5EmKY3UZaxF8Ns7cPpcfocHHvgxNkMoEYHm9cvq7VmWHIDKSggjAE7YFUouD4CgUzZBklRwoPczlpE2f47j-b8zeMmyYfiAA7LihtSE3Tylberj2EWX12H-GnP7ZXu7dV3Id10ak4_Jh-GaXbS2H0J23Clb39-tFw_FclU_Lm6XRSQYC6UaociRCoajaHxbIXfOOKclCdU6o73WshEeUSsPgSu0zipVgZeV1VxM2ew3G0MIm90-ftr99-b4WPwAdRlEVQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Monolithic Ge/Si avalanche photodiodes</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yimin Kang ; Morse, M. ; Paniccia, M.J. ; Zadka, M. ; Saad, Y. ; Sarid, G. ; Pauchard, A. ; Zaoui, W.S. ; Hui-Wen Chen ; Daoxin Dai ; Bowers, J.E. ; Han-Din Liu ; Mcintosh, D.C. ; Xiaoguang Zheng ; Campbell, J.C.</creator><creatorcontrib>Yimin Kang ; Morse, M. ; Paniccia, M.J. ; Zadka, M. ; Saad, Y. ; Sarid, G. ; Pauchard, A. ; Zaoui, W.S. ; Hui-Wen Chen ; Daoxin Dai ; Bowers, J.E. ; Han-Din Liu ; Mcintosh, D.C. ; Xiaoguang Zheng ; Campbell, J.C.</creatorcontrib><description>We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.</description><identifier>ISSN: 1949-2081</identifier><identifier>ISBN: 9781424444021</identifier><identifier>ISBN: 1424444020</identifier><identifier>EISSN: 1949-209X</identifier><identifier>EISBN: 1424444039</identifier><identifier>EISBN: 9781424444038</identifier><identifier>DOI: 10.1109/GROUP4.2009.5338300</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Avalanche photodiodes ; Bandwidth ; Breakdown voltage ; Dark current ; Gain measurement ; Optical waveguides ; Photoconductivity ; Photonics ; Silicon</subject><ispartof>2009 6th IEEE International Conference on Group IV Photonics, 2009, p.25-27</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5338300$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5338300$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yimin Kang</creatorcontrib><creatorcontrib>Morse, M.</creatorcontrib><creatorcontrib>Paniccia, M.J.</creatorcontrib><creatorcontrib>Zadka, M.</creatorcontrib><creatorcontrib>Saad, Y.</creatorcontrib><creatorcontrib>Sarid, G.</creatorcontrib><creatorcontrib>Pauchard, A.</creatorcontrib><creatorcontrib>Zaoui, W.S.</creatorcontrib><creatorcontrib>Hui-Wen Chen</creatorcontrib><creatorcontrib>Daoxin Dai</creatorcontrib><creatorcontrib>Bowers, J.E.</creatorcontrib><creatorcontrib>Han-Din Liu</creatorcontrib><creatorcontrib>Mcintosh, D.C.</creatorcontrib><creatorcontrib>Xiaoguang Zheng</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><title>Monolithic Ge/Si avalanche photodiodes</title><title>2009 6th IEEE International Conference on Group IV Photonics</title><addtitle>GROUP4</addtitle><description>We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.</description><subject>Absorption</subject><subject>Avalanche photodiodes</subject><subject>Bandwidth</subject><subject>Breakdown voltage</subject><subject>Dark current</subject><subject>Gain measurement</subject><subject>Optical waveguides</subject><subject>Photoconductivity</subject><subject>Photonics</subject><subject>Silicon</subject><issn>1949-2081</issn><issn>1949-209X</issn><isbn>9781424444021</isbn><isbn>1424444020</isbn><isbn>1424444039</isbn><isbn>9781424444038</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9j09LwzAYh-M_cM5-gl168tbufZM0yXuUoVWYTHSCt5EmKY3UZaxF8Ns7cPpcfocHHvgxNkMoEYHm9cvq7VmWHIDKSggjAE7YFUouD4CgUzZBklRwoPczlpE2f47j-b8zeMmyYfiAA7LihtSE3Tylberj2EWX12H-GnP7ZXu7dV3Id10ak4_Jh-GaXbS2H0J23Clb39-tFw_FclU_Lm6XRSQYC6UaociRCoajaHxbIXfOOKclCdU6o73WshEeUSsPgSu0zipVgZeV1VxM2ew3G0MIm90-ftr99-b4WPwAdRlEVQ</recordid><startdate>200909</startdate><enddate>200909</enddate><creator>Yimin Kang</creator><creator>Morse, M.</creator><creator>Paniccia, M.J.</creator><creator>Zadka, M.</creator><creator>Saad, Y.</creator><creator>Sarid, G.</creator><creator>Pauchard, A.</creator><creator>Zaoui, W.S.</creator><creator>Hui-Wen Chen</creator><creator>Daoxin Dai</creator><creator>Bowers, J.E.</creator><creator>Han-Din Liu</creator><creator>Mcintosh, D.C.</creator><creator>Xiaoguang Zheng</creator><creator>Campbell, J.C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200909</creationdate><title>Monolithic Ge/Si avalanche photodiodes</title><author>Yimin Kang ; Morse, M. ; Paniccia, M.J. ; Zadka, M. ; Saad, Y. ; Sarid, G. ; Pauchard, A. ; Zaoui, W.S. ; Hui-Wen Chen ; Daoxin Dai ; Bowers, J.E. ; Han-Din Liu ; Mcintosh, D.C. ; Xiaoguang Zheng ; Campbell, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-66b369c96e8213bdf512cc8cc74936fc87d774b3d1176d0e261aca6650d45a723</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Absorption</topic><topic>Avalanche photodiodes</topic><topic>Bandwidth</topic><topic>Breakdown voltage</topic><topic>Dark current</topic><topic>Gain measurement</topic><topic>Optical waveguides</topic><topic>Photoconductivity</topic><topic>Photonics</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Yimin Kang</creatorcontrib><creatorcontrib>Morse, M.</creatorcontrib><creatorcontrib>Paniccia, M.J.</creatorcontrib><creatorcontrib>Zadka, M.</creatorcontrib><creatorcontrib>Saad, Y.</creatorcontrib><creatorcontrib>Sarid, G.</creatorcontrib><creatorcontrib>Pauchard, A.</creatorcontrib><creatorcontrib>Zaoui, W.S.</creatorcontrib><creatorcontrib>Hui-Wen Chen</creatorcontrib><creatorcontrib>Daoxin Dai</creatorcontrib><creatorcontrib>Bowers, J.E.</creatorcontrib><creatorcontrib>Han-Din Liu</creatorcontrib><creatorcontrib>Mcintosh, D.C.</creatorcontrib><creatorcontrib>Xiaoguang Zheng</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yimin Kang</au><au>Morse, M.</au><au>Paniccia, M.J.</au><au>Zadka, M.</au><au>Saad, Y.</au><au>Sarid, G.</au><au>Pauchard, A.</au><au>Zaoui, W.S.</au><au>Hui-Wen Chen</au><au>Daoxin Dai</au><au>Bowers, J.E.</au><au>Han-Din Liu</au><au>Mcintosh, D.C.</au><au>Xiaoguang Zheng</au><au>Campbell, J.C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Monolithic Ge/Si avalanche photodiodes</atitle><btitle>2009 6th IEEE International Conference on Group IV Photonics</btitle><stitle>GROUP4</stitle><date>2009-09</date><risdate>2009</risdate><spage>25</spage><epage>27</epage><pages>25-27</pages><issn>1949-2081</issn><eissn>1949-209X</eissn><isbn>9781424444021</isbn><isbn>1424444020</isbn><eisbn>1424444039</eisbn><eisbn>9781424444038</eisbn><abstract>We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.</abstract><pub>IEEE</pub><doi>10.1109/GROUP4.2009.5338300</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1949-2081 |
| ispartof | 2009 6th IEEE International Conference on Group IV Photonics, 2009, p.25-27 |
| issn | 1949-2081 1949-209X |
| language | eng |
| recordid | cdi_ieee_primary_5338300 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption Avalanche photodiodes Bandwidth Breakdown voltage Dark current Gain measurement Optical waveguides Photoconductivity Photonics Silicon |
| title | Monolithic Ge/Si avalanche photodiodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T08%3A52%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Monolithic%20Ge/Si%20avalanche%20photodiodes&rft.btitle=2009%206th%20IEEE%20International%20Conference%20on%20Group%20IV%20Photonics&rft.au=Yimin%20Kang&rft.date=2009-09&rft.spage=25&rft.epage=27&rft.pages=25-27&rft.issn=1949-2081&rft.eissn=1949-209X&rft.isbn=9781424444021&rft.isbn_list=1424444020&rft_id=info:doi/10.1109/GROUP4.2009.5338300&rft_dat=%3Cieee_6IE%3E5338300%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424444039&rft.eisbn_list=9781424444038&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5338300&rfr_iscdi=true |