Monolithic Ge/Si avalanche photodiodes
We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively. |
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ISSN: | 1949-2081 1949-209X |
DOI: | 10.1109/GROUP4.2009.5338300 |