Monolithic Ge/Si avalanche photodiodes

We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.

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Hauptverfasser: Yimin Kang, Morse, M., Paniccia, M.J., Zadka, M., Saad, Y., Sarid, G., Pauchard, A., Zaoui, W.S., Hui-Wen Chen, Daoxin Dai, Bowers, J.E., Han-Din Liu, Mcintosh, D.C., Xiaoguang Zheng, Campbell, J.C.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2009.5338300