Design flow for a SiGe BiCMOS based power amplifier

Design flow for a SiGe BiCMOS based power amplifier

This paper presents a streamlined design flow for an integrated power amplifier. For a given set of amplifier specifications and BiCMOS process parameters, a software routine computes passive component values for a Class-E or Class-F based power amplifier. The routine includes a matching network for...

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Hauptverfasser: Bozanic, M., Sinha, S., du Plessis, M., Muller, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
BiCMOS process
Class-E amplifier
Class-F amplifier
Computational modeling
Frequency
Germanium silicon alloys
Impedance
impedance matching
Inductors
Power amplifiers
Q factor
Silicon germanium
SPICE netlist
spiral inductor
Spirals
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Beschreibung
Zusammenfassung:This paper presents a streamlined design flow for an integrated power amplifier. For a given set of amplifier specifications and BiCMOS process parameters, a software routine computes passive component values for a Class-E or Class-F based power amplifier. The routine includes a matching network for standard impedance loads. Spiral inductor search algorithm is used to generate inductors with Q-factors optimised at a desired frequency. Operation of the software routine is demonstrated by simulations in Austria microsystems 0.35 mum single-supply process for the 10 dBm, 2.4 GHz power amplifier design.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2009.5336537