Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide

Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide

In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 mum and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis reveale...

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Hauptverfasser: Lyamkina, A.A., Dmitriev, D.V., Moshchenko, S.P., Galitsyn, Yu.G., Toropov, A.I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitive sensors
droplet epitaxy
Epitaxial growth
Gallium arsenide
Indium
Optical surface waves
Photoluminescence
Quantum dots
Seminars
Stranski-Krastanov growth mode
Substrates
Wavelength measurement
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Zusammenfassung:In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 mum and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.
DOI:10.1109/INTERNANO.2009.5335644